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Defects Spectroscopy in Silicon Diodes

Name: Defects Spectroscopy in Silicon Diodes
Brand: Edizioni Accademiche Italiane
SKU: 02863900
Price: 61.49 EUR
Availability: InStock
Author: Barbero Nicolo
ISBN: 9783639773040

Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage

Barbero Nicolo

Lingua

Inglese

Libro In brossura

Codice Libristo: 02863900

Casa editrice Edizioni Accademiche Italiane, novembre 2015

This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the plati... Descrizione completa

Codice Libristo: 02863900

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61.49 €

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This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the "IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators" (2012-2015).